收藏本站
September 1997
NDP6020P / NDB6020P
P-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These logic level P-Channel enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process has been especially tailored to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulses in the avalanche and
commutation modes. These devices are particularly suited for
low voltage applications such as automotive, DC/DC
converters, PWM motor controls, and other battery powered
circuits where fast switching, low in-line power loss, and
resistance to transients are needed.
Features
-24 A, -20 V. R DS(ON) = 0.05 ? @ V GS = -4.5 V.
R DS(ON) = 0.07 ? @ V GS = -2.7 V.
R DS(ON) = 0.075 ? @ V GS = -2.5 V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low R DS(ON) .
TO-220 and TO-263 (D 2 PAK) package for both through
hole and surface mount applications.
________________________________________________________________________________
S
G
D
Absolute Maximum Ratings
T C = 25°C unless otherwise noted
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage - Continuous
NDP6020P
-20
±8
NDB6020P
Units
V
V
I D
Drain Current
- Continuous
-24
A
- Pulsed
-70
P D
T J ,T STG
Total Power Dissipation @ T C = 25 ° C
Derate above 25 ° C
Operating and Storage Temperature Range
60
0.4
-65 to 175
W
W/ ° C
°C
? 1997 Fairchild Semiconductor Corporation
NDP6020P Rev.C1
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
NDP6030PL MOSFET P-CH 30V 30A TO-220
NDP6060L MOSFET N-CH 60V 48A TO-220AB
NDS0605 MOSFET P-CH 60V 180MA SOT-23
NDS0610 MOSFET P-CH 60V 120MA SOT-23
NDS331N MOSFET N-CH 20V 1.3A SSOT3
NDS332P MOSFET P-CH 20V 1A SSOT3
NDS351AN MOSFET N-CH 30V 1.4A SSOT3
NDS355AN MOSFET N-CH 30V 1.7A SSOT3
相关代理商/技术参数
NDP6020P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P TO-220
NDP6020P_Q 功能描述:MOSFET P-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDP6030 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDP6030L 功能描述:MOSFET N-Channel FET LL Enhancement RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDP6030PL 功能描述:MOSFET P-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDP6030PL_Q 功能描述:MOSFET P-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDP603AL 功能描述:MOSFET N-Channel FET LL Enhancement RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDP6050 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube